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Measurement of carrier concentration on SiC wafer surface

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Technical parameters:

1、Measurement mode: MOS, Schottky

2、Sample size: diameter ≤ 200mm, minimum test size for non-standard samples or fragments is 30mm * 30mm

3、Test range for carrier concentration in epitaxial layer: 1E14-5E18 cm-3

4、Hg contact area: 0.018-0.027 cm2

5、 Contact area repeatability: 1 sigma<0.5%

 

Please contact Manager Wu from the sales department for more details (phone number:15225822566)