Our company is equipped with various advanced testing instrument for SiC epitaxial wafer, which can provide testing and analysis services for thickness, carrier concentration, roughness, and other aspects of SiC epitaxial wafer.
Technical parameters:
1、Spectral resolution: >0.25cm-1
2、Interferometer: Electromagnetic driven by a flat mirror,with continuous dynamic adjustment function of more than 130000 times
3、Spectral range: 7800-350cm-1
4、Sensitivity: > 50000:1 (peak to peak, 4cm-1 resolution, 1-minute scan, DTGS detector)
5、 Wavenumber accuracy: 0.005cm-1
6、Sample size: diameter≤ 15mm
Please contact Manager Wu from the sales department for more details (phone number:15225822566)