PowerEpi has mastered the key technology of mass production of high-quality SiC epitaxial wafers, whose thickness and doping uniformity have reached the first-class level no matter in-plane or inter-wafer. And also the defect control technology is comparable to the mainstream epitaxial manufactures in this field.
Since 2021, PowerEpi had passed validation on 4”650V/10A SBD, 6”650V/60mW MOSFET, 6”1200V/30A SBD, and 6”1200V/26mW MOSFET. The products’yield is comparable to the first-class level, and the quality of mass-produced has been highly recognized by downstream head device manufactures.
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